« Thermal mAnagemenT in nano-devices based on 2D vAn der WaaLs Materials and Interfaces »
CNRS Funding: 1 PhD grant + 15 k€
Partners :
IM2NP UMR CNRS 7334 (Marseille) : M. Bescond,
Univ. Tokyo - LIMMS IRL 2820 : M. Nomura and S. Volz.
Nanoscale miniaturization of semiconductor devices brought highly detrimental self-heating effect due to the thermalization of hot carriers generated by high electric fields. This self-heating effect results in significant reduction in performance and lifetimes of the devices. On the other hand, the refrigeration of the entire systems is extremely power consuming. Transition metal dichalcogenides (TMDs) are very promising candidates for future generations of transistors. However, in this case too, the high integration density will inevitably lead to self-heating of the chip. The advantage of TMD heterojunctions lies in the plurality of their interaction types. The van der Waals (vdW) bonds between two stacked layers and the covalent bond within the same layer give these heterostructures very versatile electrical properties. The same behavior should apply to their thermal properties. The TATAMI project therefore aims to study and to control the thermal conductivity of devices based on TMDs and to develop heterostructures with optimal thermal properties.
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