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Electron cooling behavior in cascading semiconductor double-quantum-well structures

Publication in Physical Review Applied!

We investigate evaporative electron cooling in cascading semiconductor double-quantum-well (QW) structures. In this cascading double QW structure (QW1 and QW2, where QW2 is on the anode side), one electron absorbs two longitudinal optical (LO) phonons as it travels from the cathode to the anode, for which efficient thermionic cooling is expected. By analyzing the high-energy tail of the photoluminescence spectra, the electron temperature in each QW is determined. When Al0.35Ga0.65As barriers are used, anomalous electron heating in QW2 due to hot electron distribution above the barrier is observed. By introducing taller barriers (Al0.7Ga0.3As) before QW2 to suppress hot electron distribution above the barrier, electron cooling in both QWs by several tens of kelvins is achieved (Fig. 1-left). Furthermore, oscillatory anticorrelated electron temperature change in the two QWs that results from LO-phonon scattering is observed (Fig. 1-right).





Fig. 1: (left) Lattice temperature gradient along an asymmetric double-barrier heterostructure. A 1 K temperature gradient is applied between the emitter (Temit = 300 K) and collector (Tcoll = 301 K) reservoirs; (right) Electron temperature of QW1 (black) and QW2 (red) as a function of V. Blue arrows indicate the positions of the troughs and peaks observed in the electron temperatures


Ref : X. Zhu, C. Salhani, G. Etesse, N. Nagai, M. Bescond, F. Carosella, R. Ferreira, G. Bastard, and K. Hirakawa, "Electron Cooling Behavior in Cascading Semiconductor Double-Quantum-Well Structures," Phys. Rev. Appl. 22, 034012 (2024).

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